In an announcement made on Wednesday, Samsung revealed that it has started the mass production of three-dimensional (3D) V-NAND flash memory using 32 vertically stacked cell layers. The latest offering by Samsung - which is the world-leading company in advanced memory technology - marks the first 32-layer 3D V-NAND, and the company's second-generation V-NAND offering.

Also referred to as Vertical NAND, the 32-layer 3D V-NAND flash memory from Samsung necessitates a higher level of design technology - as compared to the 24-layer V-NAND - for stacking the cell arrays.

Moreover, 32-layer 3D V-NAND flash memory is also capable of delivering notably higher production efficiency chiefly because of the fact that Samsung can use essentially the same equipment which it used for producing the first-generation V-NAND.

According to Samsung, the new 32-layer 3D V-NAND-based SSDs have nearly two times the endurance for writing data; and they also consume 20 percent less energy, in comparison to planar (2D) MLC NAND-based drives.

Noting that Samsung will continue to contribute to "fast market adoption of 3D NAND technology," Young-Hyun Jun - Samsung Electronics' Executive VP of memory sales and marketing - said that the company has increased the availability of its 3D V-NAND by unveiling "an extensive V-NAND SSD line-up that covers the PC market in addition to data centers;" and added: "Look for us to provide a consistent, timely supply of high-performance, high-density V-NAND SSDs as well as core V-NAND chips for IT customers globally."